Lectures 20–22 • Autumn 2026

Defects in Crystals
When the Pattern Breaks

Every crystal so far has been perfect: a lattice and a motif repeated without a single mistake. Real crystals always contain missing atoms, extra atoms and misplaced planes, and these defects control diffusion, ionic conductivity and strength. Here we meet all four families: point (0D), line (1D), planar (2D) and volume (3D) defects.

0D
1D
2D
3D
PointLinePlanarVolume
Point, line, planar and volume defects. In the background, a vacancy wanders through the lattice.
Where We Left Off

From Perfect Crystals to Real Ones

In Lectures 17–19 we read the perfect crystal from its diffraction pattern: peak positions gave the unit cell, intensities gave where the atoms sit. Now we let the crystal be imperfect.

Ideal crystal

Lattice + motif, with every site occupied by the right atom, forever. A useful model, but it never exists.

Real crystal

Thermal energy alone guarantees some vacancies at any temperature above 0 K; processing adds solutes, dislocations, grain boundaries, pores and second phases.

Why it matters

Atoms diffuse, ions conduct and metals deform plastically because of defects, not in spite of them.

0–3D
Lectures 20–22

Defects in Crystals

Defects are always present in crystals: any deviation from the ideal crystal structure may be termed a defect. They influence properties significantly, and are sometimes deliberately introduced in large numbers to obtain the properties we want.

Types of defects, by dimension
  • 0DPoint defects: vacancies, interstitials, solute atoms
  • 1DLine defects: dislocations
  • 2DPlanar defects: surfaces, grain boundaries, stacking faults
  • 3DVolume defects: voids, pores, precipitates, inclusions
Defects in Crystals · Overview

Defects at Every Length Scale

The four families differ in how many dimensions they extend in, and therefore in size: from a single missing atom to cracks and inclusions you can see under an optical microscope.

0D Point defects

Vacancies, interstitials, solutes: an atom or two, plus a strain field around them.

1D Line defects

Dislocations: a core about 1 nm wide, but lines µm to mm long. They carry plastic flow.

2D Planar defects

Surfaces, grain and twin boundaries, stacking faults, antiphase boundaries, phase boundaries.

3D Volume defects

Pores, cracks, inclusions, precipitates and second phases: from nm to mm.

0.1 nm1 nm1 µm1 mmsize of the defect →
Properties such as strength, ductility, diffusion and conductivity are controlled by the defects, not only by the perfect lattice.
0D
Part 1 · 0D

Point Defects

Two major categories: vacancies and interstitials. Add foreign atoms and we get solid solutions; add charge, as in ionic crystals, and we need a bookkeeping notation and charge balance.

Point Defects (0D)

Vacancies

A vacancy is created when a site that is normally occupied in a perfect crystal is unoccupied.

Perfect crystal
Imperfect crystal containing a vacancy
Animated

Watch a Vacancy Wander

vacancy hops: 0
T (K)900
Relative hop rate ∝ e−Q/kT (Q = 1 eV)
–
One empty site. The ring marks the vacancy; every hop is a neighbouring atom jumping in. The red trail is the path of the vacancy.
Atoms move one way… …and the vacancy moves the other: atom diffusion by the vacancy mechanism.
Thermally activated. Hops need energy, so they become far more frequent at high temperature. Drag the slider and watch.
Point Defects (0D)

How Many Vacancies? An Equilibrium Count

Vacancies are not just processing mistakes. A crystal at any temperature above 0 K wants some of them, because of a competition between energy and disorder.

1Each costs energy

Making one vacancy costs \(Q_v \approx 1\) eV (Cu: 0.9 eV). With \(n\) vacancies, \(\Delta H = n\,Q_v\): a straight line that rises with \(n\).

2Disorder pays back

There are very many ways to place \(n\) vacancies among \(N\) sites, so the configurational entropy \(\Delta S\) grows and \(-T\Delta S\) falls. \(\Delta G = \Delta H - T\Delta S\) has a minimum at \(n > 0\): vacancies are equilibrium defects.

3Arrhenius law

\(n_v/N = \exp(-Q_v/k_BT)\). Cu near its melting point: \(\approx 4\times10^{-4}\), i.e. about 1 empty site in every 2000.

Interactive

Find the Minimum of \(\Delta G\)

free energy per site vs vacancy fraction
Arrhenius: nv/N vs T (log scale)
T (K)1358
Qv (eV)0.90
Equilibrium vacancy fraction nv/N
–
–
In 1 cm³ of an fcc metal like Cu (≈ 8.5×1022 atoms)
–

The curves use the per-site free energy \(g(x) = xQ_v + k_BT\,[x\ln x + (1-x)\ln(1-x)]\) with \(x = n/N\). Setting \(dg/dx = 0\) gives \(x/(1-x) = e^{-Q_v/k_BT}\), i.e. \(n_v/N \approx e^{-Q_v/k_BT}\). Cu melts at about 1358 K (1085 °C).

Point Defects (0D)

Interstitials

An interstitial defect is an atom (host or foreign) sitting at a site that is not normally occupied in the perfect crystal, e.g. when an atom leaves its regular site and moves into such a site.

Perfect crystal
Imperfect crystal containing an interstitial defect
Animated

An Interstitial Squeezing Through the Lattice

Small atom, big crowd. The interstitial (gold) sits in the gaps between host atoms.
Local distortion. Neighbours are pushed aside (orange) as it passes.
Fast diffusers. Small interstitials such as C, N or H in metals move much faster than substitutional atoms, because they do not need a vacancy next to them.
Point Defects · Solutes

Foreign Atoms: Substitutional and Interstitial Solid Solutions

A foreign (solute) atom dissolved in a host (solvent) crystal is also a point defect. Where it goes depends mainly on its size.

Substitutional

The solute replaces a host (solvent) atom on its lattice site: Ni in Cu, Zn in Cu (brass), Cr in Fe.

Interstitial

Small atoms (H, B, C, N, O) squeeze into holes between host atoms: C in Fe makes steel.

Hume-Rothery rules

For extensive substitutional solubility

  1. 1Atomic radii differ by less than about 15%.
  2. 2Same crystal structure.
  3. 3Similar electronegativity (otherwise compounds form).
  4. 4Same valence (a higher-valence solute dissolves more readily).
Cu–Ni obeys all four → complete solid solubility at all compositions.
Interactive

Rule 1 Check: the 15% Size Rule

R solvent
r solute

Radii in nm. Presets: Cu 0.128, Ni 0.125, Zn 0.133, Fe 0.124, Cr 0.125, C 0.071.

Size difference |r − R|/R
–
–

Point Defects · Interstitial Sites

Where Can a Small Atom Fit? Octahedral and Tetrahedral Holes

Interstitial atoms sit in the holes (voids) left between the host atoms. In cubic metals there are two kinds, named after the polyhedron formed by the host atoms around them.

Interactive 3D · drag to rotate

Holes in FCC and BCC Unit Cells

drag to rotate · click “next hole” to move around–
Atom size
–
–
per cell
–
neighbours
–
largest r/R
–

At “Atom size” = 1 the host atoms touch as hard spheres; the coloured sphere is then the largest atom that fits in the hole without pushing its neighbours apart.

1Octahedral hole

6 neighbours. FCC: at \(\tfrac12 00\) (edge centres) and \(\tfrac12\tfrac12\tfrac12\) (body centre), 4 per cell, largest sphere \(r/R = 0.414\).

2Tetrahedral hole

4 neighbours. FCC: \(\tfrac14\tfrac14\tfrac14\), 8 per cell, \(r/R = 0.225\). BCC: \(\tfrac12\tfrac14 0\), 12 per cell, \(r/R = 0.291\).

3BCC holes: squashed

The BCC octahedral hole has \(r/R = 0.155\) and is distorted. So C in α-Fe (BCC) dissolves only up to \(\approx 0.022\) wt% vs about 2.1 wt% in γ-Fe (FCC).

Point Defects · Misfit Strain

Solute Atoms Strain the Lattice Around Them

A misfitting atom pushes or pulls its neighbours. The strain field it creates is what makes solutes useful (strengthening) and harmful (lower conductivity).

Interactive

Grow or Shrink the Solute

displacements exaggerated ×4
r / ra
Misfit strain ε
–
Volumetric strain ≈ 3ε
–
–
\(\varepsilon = \dfrac{r - r_a}{r_a}\)   (\(r\) = solute radius, \(r_a\) = host radius)
\(\Delta V = \tfrac43\pi r_a^3\cdot 3\varepsilon = 4\pi r_a^3\varepsilon\)
Small solute (ε < 0). Neighbours are pulled in: local tension.
Large solute (ε > 0). Neighbours are pushed out: local compression.
Symmetric or not. Substitutional: a nearly spherical field. Interstitial C in BCC Fe: tetragonal, giving very strong strengthening. The same atom on a different site gives a different strain.
Point Defects · Properties

Why Point Defects Matter in Metals

Cu–Ni solid solutions (schematic, after Callister)

Strength peaks at intermediate compositions while electrical resistivity rises: every solute atom both pins dislocations and scatters electrons.

Solid-solution strengthening

Solute strain fields pin dislocations → stronger alloys, but lower electrical and thermal conductivity (more scattering).

Diffusion

Vacancies let atoms move: homogenisation, heat treatment, sintering and creep at high temperature.

Irradiation damage

Neutrons knock atoms off their sites (Frenkel pairs) → voids, swelling and embrittlement in reactor materials.

Hard to see, easy to feel

Single point defects are difficult to image or count, yet they change properties strongly.

±
Part 1b · 0D in ionic crystals

Charged Point Defects

In an ionic crystal every missing or extra ion carries charge. We need a notation that tracks it (Kröger–Vink), and rules that keep the crystal neutral: Schottky and Frenkel defects, non-stoichiometry and defect reactions.

A Shorthand for Charged Defects

Kröger–Vink Notation for Point Defects in Ionic Crystals

A point defect is written as a symbol of the form \(X_Y^Z\), where

  • Xwhat is present on the site: V for a vacancy, or the symbol of the element occupying it;
  • Ythe type of site occupied: i for an interstitial site, or the symbol of the element that normally occupies it;
  • Zthe charge relative to the normal charge on site Y: a dot \(^\bullet\) for each positive unit, a prime \('\) for each negative unit, and \(^\times\) for zero.
In NaCl, a cation vacancy is \(V_{\mathrm{Na}}'\): V sits on a site normally occupied by Na\(^+\), and the charge relative to Na\(^+\) is \(0-1 = -1\). An anion vacancy is \(V_{\mathrm{Cl}}^\bullet\).
Y in ZrO\(_2\): Y\(^{3+}\) on a Zr\(^{4+}\) site is \(\mathrm Y_{\mathrm{Zr}}'\), balanced by oxygen vacancies \(V_{\mathrm O}^{\bullet\bullet}\).
Interactive

Kröger–Vink Builder

Symbol
–
–
•
= +1 each
′
= −1 each
×
= 0
Keeping Charge Balanced

Schottky and Frenkel Defects

To keep the solid as a whole neutral, defects with charges of opposite sign must be present together. There are two ideal types.

Schottky defect

Cation vacancies (effective charge negative, e.g. \(V_{\mathrm{Na}}'\)) are balanced by anion vacancies (effective charge positive, e.g. \(V_{\mathrm{Cl}}^\bullet\)).

• In NaCl, \(n\) \(V_{\mathrm{Na}}'\) require \(n\) \(V_{\mathrm{Cl}}^\bullet\).

• In Nb\(_2\)O\(_5\), every 2 \(V_{\mathrm{Nb}}'''''\) require 5 \(V_{\mathrm O}^{\bullet\bullet}\): \(2\times(-5) + 5\times(+2) = 0\).

Frenkel defect

An ion moves from its usual site to an interstitial site, forming a vacancy and an interstitial together: a Frenkel pair. If an Na\(^+\) ion in NaCl moved to an interstitial site, \(V_{\mathrm{Na}}'\) and \(\mathrm{Na}_i^\bullet\) would form.

In practice NaCl forms mainly Schottky defects; Frenkel pairs dominate in AgCl. NaCl is used here only to show the notation.

A slightly more complex example

A Bi\(_2\)O\(_3\) molecule is added to a CaTiO\(_3\) crystal such that Bi substitutes for Ca, there is no substitution at the Ti site and no vacancies at the Ti site, and no interstitials form. What happens?

\[2\mathrm{Bi_2O_3}+6\mathrm{CaTiO_3}\rightarrow 4\mathrm{Bi}_{\mathrm{Ca}}^{\bullet}+6\mathrm{Ti}_{\mathrm{Ti}}^{\times}+18\mathrm O_{\mathrm O}^{\times}+6\mathrm{CaO}+2V_{\mathrm{Ca}}''\]

The extra CaO is either removed from the crystal or placed on its surface, so that the rest of the crystal remains unchanged.

Check: charge \(4(+1)+2(-2) = 0\); Ca sites \(4+2 = 6\) = Ti sites; O: \(6+18 = 18+6\).

Animated

Schottky and Frenkel, Step by Step

Na⁺ (cation)Cl⁻ (anion)
Ionic Crystals · Composition

Stoichiometric and Non-Stoichiometric Point Defects

Stoichiometry = the ratio of the numbers of atoms of each element. Point defects can keep it (Schottky, Frenkel) or shift it (oxygen loss or gain, mixed valence).

The formula is unchanged

Stoichiometric defects

  • Schottky in A\(_2\)X\(_3\): for every \(2n\) \(V_A'''\) there are \(3n\) \(V_X^{\bullet\bullet}\). Cations and anions go missing in the formula ratio.
  • Frenkel: the displaced ions stay inside the crystal, on interstitial sites, so the composition is unchanged.
The formula changes

Non-stoichiometric defects

  • MgO\(_{1-\delta}\): oxygen vacancies, \(0 < \delta \ll 1\).
  • Fe\(_{1-x}\)O (wüstite): Fe\(^{2+}\) vacancies, each compensated by two Fe\(^{3+}\): \(V_{\mathrm{Fe}}'' + 2\mathrm{Fe}_{\mathrm{Fe}}^{\bullet}\).
  • The extra charge sits on electrons or holes → electronic conductivity.
Interactive

Build Fe1−xO One Vacancy at a Time

Formula
FeO
Fe²⁺
–
Fe³⁺
–
VFe
–
✓–
Fe²⁺Fe³⁺O²⁻□ V″Fe

32 Fe sites and 32 O sites. Each Fe vacancy removes +2; two Fe²⁺ → Fe³⁺ add +1 each, so the crystal stays neutral while the Fe : O ratio drops below 1.

Non-Stoichiometry

Losing Oxygen: MgO Becomes MgO1−δ

Heated in a low-oxygen atmosphere, oxygen ions leave as O\(_2\) gas. Each one leaves behind a doubly charged oxygen vacancy and two electrons.

Animated

Oxygen Leaves as Gas

gas (low pO₂)
Atmosphere

Left: oxygen-rich, low T. Right: lower oxygen partial pressure or higher T (qualitative).

Formula of this patch
MgO
\[\mathrm O_{\mathrm O}^{\times} \rightarrow V_{\mathrm O}^{\bullet\bullet} + \tfrac12\mathrm O_2(g) + 2e'\]
Mg²⁺O²⁻e′ (electron)
1 Oxygen leaves as gas. Mass ✓; sites ✓ (the O site is still there, now vacant); charge: \(+2-2 = 0\) ✓.
2 Electrons balance charge. The two electrons stay behind: the oxide becomes an n-type conductor (and often changes colour).
3 δ is not fixed. Lower oxygen partial pressure or higher T → more oxygen vacancies → larger δ. For the whole crystal: MgO → MgO\(_{1-\delta}\) + (\(\delta\)/2) O\(_2\)(g), with \(\delta\) \(V_{\mathrm O}^{\bullet\bullet}\) and \(2\delta\) e′ created.
Ionic Crystals · Kröger–Vink Reactions

Writing Defect Reactions: Three Balances

1 Mass balance

Every atom on the left appears on the right. Vacancies, electrons e′ and holes h\(^\bullet\) carry no mass.

2 Site balance

The host ratio of cation : anion sites is fixed: 1:1 in NaCl and MgO, 1:2 in ZrO\(_2\), 2:3 in Al\(_2\)O\(_3\). Vacancies occupy sites; interstitials do not.

3 Charge balance

The sum of effective charges is the same on both sides (\(^\bullet = +1\), \('=-1\), \(^\times = 0\)); for a dopant reaction it is zero.

Recipe for a dopant: (i) put the dopant cation on the host cation site it replaces; (ii) put its anions on anion sites; (iii) restore the host site ratio with vacancies (or interstitials); (iv) check that the charges add up.
Interactive

Defect Reaction Checker

1
Mass
2
Sites
3
Charge
Defect Reactions

Dissolving CaCl2 in NaCl, Step by Step

Every ion must sit on a site of the host, and the crystal must stay neutral. Follow the sites, then the charges.

1
Ca²⁺ on a Na⁺ site

Effective charge \(+2-(+1)=+1\) → \(\mathrm{Ca}_{\mathrm{Na}}^{\bullet}\).

2
Two Cl⁻ on two Cl sites

\(2\mathrm{Cl}_{\mathrm{Cl}}^{\times}\). NaCl needs Na sites : Cl sites = 1 : 1.

3
The site ratio forces a vacancy

2 Cl sites need 2 Na sites: one holds Ca, one stays empty → \(V_{\mathrm{Na}}'\).

4
Check

\(\mathrm{CaCl_2}\xrightarrow{\mathrm{NaCl}}\mathrm{Ca}_{\mathrm{Na}}^{\bullet}+V_{\mathrm{Na}}'+2\mathrm{Cl}_{\mathrm{Cl}}^{\times}\). Mass: 1 Ca + 2 Cl both sides. Sites: 2 Na : 2 Cl. Charge: \(+1-1+0=0\).

Aliovalent doping. The same idea makes ZrO\(_2\) an oxide-ion conductor: Y\(^{3+}\) or Ca\(^{2+}\) on Zr sites create \(V_{\mathrm O}^{\bullet\bullet}\), used in solid oxide fuel cells (SOFCs) and O\(_2\) sensors.
In-Class Questions

Your Turn: Kröger–Vink Defect Reactions

Try each one before opening the answer. Then put it into the checker above to see the three balances.

Q1KCl: \(\text{null} \rightarrow V_{\mathrm K}' + V_{\mathrm{Cl}}^{\bullet}\). Which defect is this?
A Schottky pair: one cation and one anion vacancy; stoichiometry is kept.
Q2Schottky disorder in Al\(_2\)O\(_3\): \(\text{null} \rightarrow \_\_V_{\mathrm{Al}}''' + \_\_V_{\mathrm O}^{\bullet\bullet}\)
\(\text{null} \rightarrow 2V_{\mathrm{Al}}''' + 3V_{\mathrm O}^{\bullet\bullet}\), since \(2(-3)+3(+2) = 0\) and the sites stay 2 : 3.
Q3CaO dissolved in ZrO\(_2\) (Ca on Zr sites)
\(\mathrm{CaO} \rightarrow \mathrm{Ca}_{\mathrm{Zr}}'' + V_{\mathrm O}^{\bullet\bullet} + \mathrm O_{\mathrm O}^{\times}\) (1 cation : 2 anion sites ✓, \(-2+2=0\) ✓)
Q4Al\(_2\)O\(_3\) dissolved in MgO (Al on Mg sites)
\(\mathrm{Al_2O_3} \rightarrow 2\mathrm{Al}_{\mathrm{Mg}}^{\bullet} + V_{\mathrm{Mg}}'' + 3\mathrm O_{\mathrm O}^{\times}\) (3 : 3 sites ✓, \(+2-2=0\) ✓)
Why should we care?

Importance of Point Defects in Ionic Solids (and Beyond)

1Motion of ions in solid electrolytes used in solid oxide fuel cells.
2Motion of ions in ionic solids used for chemical sensors.
3Ion implantation in semiconductor processing, to dope materials with extrinsic dopants such as B, P or As.
4Alloy formation: atoms of one metal may substitute for those of another, or the solute (minority metal) atoms may occupy interstitial sites in the solvent (majority metal) lattice.
5Sintering and densification of ceramics, corrosion, and the oxide-ion conductors in sensors and fuel cells all rely on diffusion of point defects.
1D
Part 2 · 1D

Line Defects: Dislocations

The puzzle: pure metals start to deform permanently at stresses thousands of times below what it takes to slide perfect atomic planes over each other. Why? The answer is the dislocation.

From the specimen down to the atoms
Line Defects

Why Crystals Do Not Slip All at Once

Compare shearing the top half rigidly with letting a dislocation carry the slip across, one bond row at a time.

Animated

Rigid Slip vs Dislocation Glide

1 Rigid slip. Every bond across the plane breaks together → theoretical shear strength \(\tau_{th} \approx G/2\pi\). For Cu, \(G = 48\) GPa → \(\tau_{th} \approx 7.6\) GPa.
2 Reality. A pure Cu single crystal starts to slip at \(\approx 1\) MPa: thousands of times lower.
3 Dislocation glide. Only bonds at the core rearrange: slip spreads one row at a time, like moving a large carpet by pushing a ruck across it.
Line Defects (1D)

Edge Dislocations and the Burgers Vector

Line defects run along a curve through an otherwise ordered material and involve a translation of one part of the crystal relative to the other. There are two basic types: edge and screw.

Edge dislocation

  • • An extra half-plane of atoms is inserted into the crystal, causing distortion around its lower edge, the dislocation line (marked \(\perp\); line AA′ in Borchardt-Ott’s figure).
  • • It is measured by the Burgers vector \(\mathbf b\), which for an edge dislocation is normal to the dislocation line.
Finding \(\mathbf b\): the Burgers circuit
  1. On a projection normal to the dislocation line, walk a closed loop of lattice-point hops around the distorted region, with as many hops in each direction as in the opposite direction: 4 right, 3 down, 4 left, 3 up.
  2. In a perfect crystal this loop would close. Around a dislocation it does not.
  3. The extra step needed from the final point back to the starting point gives the magnitude and direction of \(\mathbf b\).

After Fig. 13.2, Crystallography by W. Borchardt-Ott (Springer, 2nd ed.).

Animated

An Edge Dislocation Gliding Under Shear

Extra half-plane. \(\perp\) marks the dislocation line; bonds near the core are the most strained (red).
Burgers circuit. A loop that would close in a perfect crystal fails to close around \(\perp\): the closure is \(\mathbf b\).
Slip one bond at a time. When \(\perp\) exits, the top half has moved by \(\mathbf b\) and a step appears at the surface.
Line Defects · Definition

A Dislocation Is the Boundary of the Slipped Area

Inside the shaded area the crystal has slipped by \(\mathbf b\); outside it has not. The line marks where slip stops, so it cannot just end inside a crystal.

Interactive

Grow the Slipped Area

Slipped area
–
–
Edge: the line is perpendicular to \(\mathbf b\); the extra half-plane ends on it.
Screw: the line is parallel to \(\mathbf b\); the planes around it form a spiral ramp.

Same \(\mathbf b\), same slip plane: only the direction in which the slipped area has grown differs. When the slipped area reaches the far face, the line leaves the crystal and a surface step of size \(b\) remains.

Line Defects

Making a Screw Dislocation

Cut part-way into the crystal, shift one side by \(\mathbf b\) parallel to the edge of the cut, and re-join. The atomic planes become a single spiral ramp.

Interactive 3D · drag to rotate

Cut, Shift, Re-join

drag to rotateshift = 0
Shift / b
1
Cut and shift

The cut runs from the front face to the red line. One side is shifted by \(\mathbf b\), parallel to the edge of the cut.

2
A spiral ramp

The planes crossing the line join into one helical ramp: a spiral staircase of atoms. Atom shades alternate from one horizontal layer to the next.

3
Burgers circuit

The closure F→S = \(\mathbf b\) lies along the line: \(\mathbf b \parallel \mathbf l\) is the signature of a screw (edge: \(\mathbf b \perp \mathbf l\)).

Line Defects · Mixed Character

One Line, One Burgers Vector: the Mixed Dislocation

A dislocation line can curve. Here it enters the cube as an edge dislocation on the front face, curls through the crystal as a mixed dislocation, and leaves through the adjacent right face as a screw dislocation. The line direction changes all the way; the Burgers vector never does.

Interactive 3D · drag to rotate

Edge → Mixed → Screw in a Cubic Crystal

drag to rotate · use the views to look at each face–

Showing the whole crystal.

atoms above the slip plane atoms below dislocation line line direction t Burgers vector b Burgers circuit
Point on line
Loop radius
Character at this point
–
–
Line direction t
–
Burgers vector b
–
Screw part (b·t)t
–
Edge part b − (b·t)t
–
Burgers circuit closure here (F → S)
–
1 Front face: edge. The line enters perpendicular to b. Use the Front face view: above the slip plane there is one extra vertical plane of atoms, the edge dislocation of the previous sections.
2 Inside: mixed. Along the curve the angle between t and b goes from 90° to 0°. At every point b splits into an edge part (⊥ t) and a screw part (∥ t); only the split changes, not b itself.
3 Right face: screw. The line leaves parallel to b. Use the Right face view: across the slip plane the slipped part is offset by b out of the face: a surface step that ends where the screw dislocation emerges.
Why b cannot change. The line is the boundary of one slipped area, and the whole area has slipped by the same vector b. A Burgers circuit drawn around the line anywhere along it (slide the green circuit along) closes with the same b: here always one spacing along +x. If b did change, the line would have to branch at a node, as in Frank’s rule.

Model: a simple cubic lattice with b = one lattice spacing along x. Each atom is displaced along b by \(u = b\,\varphi/2\pi\), where \(\varphi\) is its angle around the nearest point of the line. That is the exact screw field and a simplified edge field (the small displacements perpendicular to b near the edge part are left out). Atoms are drawn shrunk so that the lattice can be seen through.

Line Defects

Volterra’s Construction: Cut, Displace, Re-join

Cut a hollow cylinder along a radial plane, displace one cut face relative to the other by \(\mathbf b\), and glue. The axis of the cylinder becomes a dislocation line.

Animated

Volterra’s Recipe

Interactive

Elastic Energy per Unit Length

\[E_{edge} \approx \frac{Gb^2}{4\pi(1-\nu)}\ln\frac{R}{r_0}, \qquad E_{screw} \approx \frac{Gb^2}{4\pi}\ln\frac{R}{r_0}\]

\(G\) = shear modulus, \(b = |\mathbf b|\), \(\nu\) = Poisson’s ratio, \(R\) = outer cut-off radius, \(r_0\) = core radius. The strain field is perfect everywhere except near the red axis.

G (GPa)
b (nm)
ν
ln(R/r₀)
Edge
–
Screw
–
½Gb² for comparison
–

Defaults: G = 48 GPa for Cu; b = a/√2 with a = 0.3615 nm. Both energies scale as \(Gb^2\) (about \(\tfrac12 Gb^2\) per unit length), so dislocations with the shortest \(\mathbf b\) are the cheapest.

Line Defects · Shortest Lattice Vectors

Burgers Vectors in Common Lattices

A perfect dislocation has a lattice translation as its Burgers vector. Because \(E \propto Gb^2\), the shortest one is the usual choice. Click a row.

LatticeBurgers vector bNo. of equivalent bb²relative b²

After Kelly & Knowles, Crystallography and Crystal Defects. Bars compare b² for each lattice taking c = 1.633a for HCP.

Reading the table
  • Shaded rows: the shortest lattice translation, the usual \(\mathbf b\), because \(E \propto Gb^2\).
  • Counts include both senses (FCC: 6 directions × 2 = 12).
  • Longer \(\mathbf b\) (e.g. <100> in BCC) are rarer and often unstable.
Selected
–
Line Defects · Dislocation Reactions

Frank’s Rule: Will a Dislocation Reaction Happen?

1 Vectors must add up

\(\mathbf b_1 = \mathbf b_2 + \mathbf b_3\): the Burgers vector is conserved at a node.

Node: a point where three or more dislocation lines meet. Like currents at a junction, the total \(\mathbf b\) flowing in = the total \(\mathbf b\) flowing out.

2 Energy must drop

Since \(E \propto Gb^2\): \(\mathbf b_1 \rightarrow \mathbf b_2 + \mathbf b_3\) is favourable if \(b_1^2 > b_2^2 + b_3^2\).

Shockley partial: in FCC, \(\mathbf b = \tfrac16\langle 112\rangle\). Not a lattice vector, so it leaves a stacking fault behind it.

Example: FCC — a perfect dislocation splits into two Shockley partials
\[\tfrac12[\bar1 10] \rightarrow \tfrac16[\bar2 11] + \tfrac16[\bar1 2\bar1]\] \[\text{Vectors: }\tfrac16[\bar2 11]+\tfrac16[\bar1 2\bar1] = \tfrac16[\bar3 30] = \tfrac12[\bar1 10]\ \checkmark\] \[\text{Energy: }\tfrac{a^2}{2} \rightarrow \tfrac{a^2}{6}+\tfrac{a^2}{6} = \tfrac{a^2}{3} < \tfrac{a^2}{2}\ \checkmark\]
Interactive

Frank’s Rule Checker (FCC)

1
Vectors add up?
2
Energy drops?
Candidate {111} glide planes (b·n = 0)
–

Type each b as a fraction and three indices, e.g. 1/6 and -2 1 1. Energies are in units of a². A dislocation glides only on a plane that contains both its b and its line: see (c), where the product’s line is not in any of these planes.

In-class assignment

Dislocation Reactions in FCC

For each: (i) do the vectors add up? (ii) does Frank’s rule allow it? (iii) on which plane does each dislocation glide (\(\mathbf b\cdot\mathbf n = 0\))?

a\(\tfrac12[\bar110] \rightarrow \tfrac16[\bar12\bar1] + \tfrac16[\bar211]\)
Sum ✓; \(a^2/2 \rightarrow a^2/3\) ✓ feasible. All three are perpendicular to [111], so all glide on (111): dissociation into Shockley partials.
b\(\tfrac16[\bar12\bar1] + \tfrac16[\bar211] \rightarrow \tfrac12[\bar110]\)
Sum ✓, but \(a^2/3 \rightarrow a^2/2\) ✗: energy would rise, so the partials do not recombine on their own.
c\(\tfrac12[\bar110] + \tfrac12[101] \rightarrow \tfrac12[011]\)
Sum ✓; \(a^2 \rightarrow a^2/2\) ✓ feasible. The reactants glide on (111) and (\(\bar1\)11); the product (line \([0\bar11]\), \(\mathbf b = \tfrac12[011]\)) lies on (100), not a slip plane → a sessile Lomer lock: work hardening.
Line Defects · Experimental Evidence

Seeing Dislocations and Slip

Click any micrograph to enlarge it.

TEM image of dislocation lines in titaniumnanometre scale
Dislocation lines in Ti, TEM (Callister, Ch. 4). Each dark line is one dislocation seen through a thin foil.
Optical micrograph of slip bands in a steel grainmicrometre scale
Slip bands in a steel grain, optical (Bouaziz et al., Curr. Opin. Solid State Mater. Sci. 2011).
Slip bands in an iron single crystalspecimen scale
Slip bands in an iron single crystal (Hull & Bacon, Ch. 3).
How to read them: the two optical images show a surface polished flat before deformation. Each dark line or band is a surface step where many dislocations left the crystal on one slip plane (a slip band = many closely spaced slip lines); the light regions are unslipped, still-flat crystal. In the TEM image, each dark line is one dislocation seen through a thin foil.
2D
Part 3 · 2D

Planar Defects

Interfaces across which the crystal changes orientation, stacking, ordering or phase — and the most obvious one: the free surface of the crystal.

Planar Defects · Overview

Five Kinds of Internal Interface

Grain boundary

Two grains of different orientation (low- or high-angle).

Stacking fault

One wrong layer in the ABC stacking.

Twin boundary

Mirror-image lattice on either side.

Antiphase boundary

Ordered domains out of step.

Phase boundary

Interface with another phase (e.g. a precipitate).

Grain Boundaries · Geometry

Describing a Grain Boundary: Tilt and Twist

Misorientation
Tilt: the rotation axis lies in the boundary plane.
Twist: the rotation axis is normal to the boundary plane.
Real boundaries usually mix both.
Grain Boundaries

A Low-Angle Tilt Boundary Is a Wall of Edge Dislocations

Tilt two grains by \(\theta\) about an axis lying in the boundary: one extra half-plane is needed every \(D = b/\theta\).

–
Tilt θ (°)
θ in radians
–
Spacing D = b/θ
–
–
1 D = b/θ. \(D\): spacing between neighbouring edge dislocations in the boundary; \(b\): Burgers vector; \(\theta\) in radians.
2 Low angle (≲ 15°). Discrete dislocations with good crystal between them: sub-grain boundaries.
3 High angle (≳ 15°). D shrinks as θ grows; at 15°, D ≈ 4b. Each core is a few b wide, so neighbouring cores merge and single dislocations can no longer be told apart: a disordered layer a few atoms thick. The boundary energy levels off at about 0.5–1 J m\(^{-2}\).
Strengthening

Grain Boundaries Block Slip: Pile-Ups and Hall–Petch

Dislocations from a source glide until the boundary stops them; the pile-up concentrates stress at its head.

Animated + interactive

Pile-Up at a Grain Boundary

Grain size d
Hall–Petch (schematic)
\(\sigma_y = \sigma_0 + k\,d^{-1/2}\)
1 A barrier to slip. Across a boundary the slip plane changes orientation, so dislocations stop and pile up.
2 Stress at the head. \(n\) dislocations in a pile-up concentrate about \(n\) times the applied stress at the boundary.
3 Hall–Petch. Finer grains → shorter pile-ups → stronger metal. \(d\): average grain diameter (grain size); \(\sigma_0\): friction stress of a single crystal; \(k\): Hall–Petch constant.
Planar Defects

Stacking Faults and Twins: Errors in ABC Stacking

FCC stacks close-packed {111} layers ABCABC…; shifting layers by a partial vector \(\mathbf b_p\) changes the sequence.

Interactive

Stacking Sequence Builder

Sequence (bottom → top)
Add layer
What the builder sees
–

A layer is outlined in red when the layers directly above and below it are the same (…BAB…): locally HCP-like stacking. In perfect FCC every layer has different neighbours above and below. Two identical layers can never sit directly on top of each other.

1 Perfect FCC. Close-packed {111} layers stacked ABCABC…
2 Intrinsic fault. ABCAB|ABCA: a missing layer gives a thin HCP-like slab (…BAB…). Found mostly in FCC and HCP metals.
3 Twin. ABCA(B)ACBA: each layer above the twin plane is shifted by one more partial → a mirror image across the twin plane.
Planar Defects · Twins

Twin Boundaries

A twin boundary is a special grain boundary: one side is the mirror image of the other. It is coherent and of very low energy.

Atoms on one side are mirror images of the other across the twin plane (dashed).

EBSD map of twins in laser-welded 316L stainless steelEBSD
TEM images of twins in 316L stainless steelTEM
Twins in laser-welded 316L stainless steel: EBSD map and TEM (courtesy Soudip Basu, PhD student).
Twinned pyrite crystal
A twinned pyrite crystal.

Annealing twins form during recrystallisation (common in FCC metals with low stacking-fault energy \(\gamma_{SF}\): Cu, brass, austenitic steel).

Deformation twins form under shear (high strain rate, low temperature, BCC and HCP metals).

Planar Defects

Antiphase Boundaries in Ordered Alloys

Ordering domains start independently. Where a domain with A on the “wrong” sublattice meets another, an antiphase boundary (APB) forms.

Animated

Order on Cooling, Then Look at the Seam

disordered
A atomB atomwrong A–A / B–B bonds
1 Ordered alloys. β-brass (CuZn), Cu\(_3\)Au, Ni\(_3\)Al: each element prefers its own sublattice. (Shown: a 2D analogue of the 50/50 CuZn order.)
2 Out of phase. Domain 1 puts A on even sites, domain 2 on odd sites. Same structure and orientation on both sides, but one side is shifted by one neighbour step: a translation of the disordered lattice, but not of the ordered one.
3 Cost: wrong bonds. APB energy = cost of the wrong bonds. In Ni\(_3\)Al superalloys dislocations travel in pairs, so the second one removes the APB left by the first. APBs show up as thin lines in TEM dark-field images.
3D
Part 4 · 3D

Volume Defects

Precipitates, pores, cracks, inclusions and second phases: from nanometres to millimetres. Some are designed in, some are fought against.

Interfaces

Precipitates and Phase Boundaries

How well the precipitate lattice (orange) matches the matrix (brown) decides the interface.

Interactive

Coherent, Semi-Coherent, Incoherent

–
Misfit ε
Coherency (misfit) strain: \(\varepsilon = \dfrac{a_p - a_m}{a_m}\)
–
–
1 Coherent. Planes continue across; the misfit is stored as elastic strain.
2 Semi-coherent. Misfit dislocations, one every \(\sim b/\varepsilon\), relieve the strain at the interface.
3 Incoherent. No lattice matching; the high interface energy decides the particle shape.

Small misfit → coherent · larger misfit / bigger particles → semi-coherent · different structure → incoherent.

Precipitation Strengthening

Dislocations Meet Precipitates: Cut or Loop

Top view of a slip plane: a dislocation line (red) sweeps upward past a row of particles (gold).

Animated

Cut Through or Loop Around

–
1 Cutting. Small, coherent particles are sheared by \(\mathbf b\) (new interface + disorder); the resistance grows with particle size.
2 Orowan looping. Large, hard particles: the line bows between them; at a semicircle (\(\tau \approx Gb/L\), \(L\) = particle spacing) it passes and leaves a loop around each particle.
3 Peak strength. Best where the two mechanisms cross over: peak-aged Al–Cu, Ni superalloys.
schematic: stress to pass vs particle size
Volume Defects · Micrographs

Pores, Cracks and Second Phases

Dual-phase steel micrographsSEM · TEM
Dual-phase steel: martensite islands in ferrite (SEM; TEM + diffraction).
Cracks in a laser-melted superalloyoptical
Cracks in CM247LC superalloy built by selective laser melting.
Pores in a plasma-sprayed coatingSEM
Pores and splat boundaries in a plasma-sprayed Ni–5Al coating.

Pores: gas, shrinkage, poor sintering.

Cracks: solidification and thermal stresses.

Second phases: designed (dual-phase steel) or harmful.

Volume Defects · Inclusions

Inclusions: Unwanted Foreign Particles

Oxides, sulphides and silicates trapped during steelmaking. What they do during hot working depends on how they deform.

Animated

Hot Rolling Three Kinds of Inclusion

  • • Hard ones do not deform: voids open at their ends.
  • • Brittle ones break into stringers.
  • • Plastic ones (MnS) elongate → direction-dependent toughness.
  • • Inclusions are crack starters in fatigue and in wire drawing.
SEM image of inclusion particlesSEM
Inclusion particles (SEM).
Hard alumina inclusion at a wire fracturefracture
A hard alumina inclusion at a wire fracture (doi:10.1016/j.jmrt.2019.01.009).
Volume Defects · Second Phases

Second Phases on Purpose: Cast Irons and Composites

The shape and distribution of a second phase matter as much as its amount.

Graphite in cast irons

Same Phase, Very Different Toughness

Grey cast iron with graphite flakesflakes
Grey iron: graphite flakes.
Ductile cast iron with graphite nodulesnodules
Ductile iron: graphite nodules.
Malleable cast iron with graphite rosettesrosettes
Malleable iron: graphite rosettes.

Callister, Ch. 11. Sharp-tipped flakes act like internal cracks; rounded nodules do not, which is why ductile iron is so much tougher than grey iron.

Composites

Particles, Fibres or Layers Added on Purpose

Composites add particles, fibres or layers on purpose to carry load or block dislocations.

Boron fibres in aluminiumfibres
B fibres in Al (Callister, Ch. 16).
SiC/Al laminatelaminate
SiC/Al laminate (Meyers & Chawla, Ch. 15).
Defects in Crystals · Summary

The Defect Family and What Each One Does

0D · point

What
Vacancies, interstitials, solutes; Schottky, Frenkel
Ideas
\(n_v/N = e^{-Q_v/kT}\); \(\varepsilon = (r-r_a)/r_a\); Kröger–Vink with mass, site and charge balance
Controls
Diffusion, solid-solution strength, ionic and electronic conduction

1D · line

What
Edge, screw and mixed dislocations; partials
Ideas
\(\mathbf b\), \(\mathbf l\); Burgers circuit; Frank’s rule; \(E \approx \tfrac12 Gb^2\)
Controls
Plastic flow, work hardening, ductility

2D · planar

What
Grain and twin boundaries, stacking faults, APBs, phase boundaries
Ideas
\(D = b/\theta\); \(\gamma_{SF}\); Hall–Petch
Controls
Strength, toughness, corrosion, transport

3D · volume

What
Pores, cracks, inclusions, precipitates, second phases
Ideas
Coherent → incoherent; cutting vs Orowan (\(\tau \approx Gb/L\))
Controls
Fracture, fatigue, precipitation strengthening
Quick check

Sort the Defects by Dimension

Pick 0D, 1D, 2D or 3D for each, then check.

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Practice Assessment

Did It Sink In? - 20-22

75 questions on point, line, planar and volume defects: vacancies and solid solutions, Kröger–Vink defect reactions, dislocations and Frank’s rule, grain boundaries and twins, and precipitates and second phases.

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