Devices and System Heterointegration (DESH) Group

Prof. Veeresh Deshpande, IIT Bombay

Memory and Advanced Logic Devices

Oxide channel transistors for 3D integration

We are developing Indium Tin Oxide (ITO) based transistors to integrate on top of Si CMOS back-end of line. ITO channel offers extremely low off current (~1e-17 A/um) along with resonably good drive current (several 100 uA/um). Therefore, it has high potential for embedded DRAM (with 2-transistor circuit). We have developed ITO transistors with ~300 nm gate length and also developed device and circuit concepts for In-Memory computing and Neuromorphic computing.

We are futher exploring 3D device fabrication, device reliability characterization. Under this project we collaborate with Applied Materials.

Research Area 1

3D Monolithic IC concept for BEOL in-memory computing with ITO transistors and advanced CMOS.


Ferroelectric and resistive memory devices

We are exploring Hafnium Zirconium Oxide (HZO) based ferroelectric memory devices. We are exploring:

  • Ferroelectric non-volatile capacitor
  • Ferroelectric tunnel junction
  • Ferroelectric FET with Si and ITO channel
  • Multi-level Resistive RAM devices

    • Research Area 1

    Hafnium Zirconium Oxide FeCAP and RRAM for 3D Integration. References: [Hanif et al.,: EDTM 2024] [Multi-level RRAM: ACS AEM]

    We are collaborating with Applied Materials (US), University of Groningen (Netherlands), Yale University (US), University of Notre Dame (US),and IISc in this area.